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| DKV6510-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6510-12 is an Ion Implanted Silicon Hyperabrupt Varactor Diode Designed for Octave Tuning up to 500 MHz. FEATURES INCLUDE: * Large Tuning Ratio - 14:1 Typ. * High Q - 700 Typ. * Hermetic Glass DO-7 Package PACKAGE STYLE DO-7 MAXIMUM RATINGS IF VR PDISS TJ T STG 100 mA 12 V 400 mW @ TC = 25 OC -55 OC to +150 OC -65 OC to +200 OC NONE CHARACTERISTICS SYMBOL VBR IR CT2 CT10 CT2/ CT10 Q IR = 10 A VR = 10 V VR = 2.0 V VR = 10 V TC = 25 OC TEST CONDITIONS MINIMUM 12 TYPICAL MAXIMUM 100 UNITS V A pF pF ----- f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz 45 4.0 10.0 200 700 75 7.0 17.0 VR = 2 & 10 V VR = 2.0 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-300 Specifications are subject to change without notice. REV. A 1/1 |
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